0.9v drive nch mosfet RYC002N05 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) high speed switing. 2) small package(sst3). 3)ultra low voltage drive(0.9v drive). ? application switching ? packaging specifications ? inner circuit package taping code t316 basic ordering unit (pieces) 3000 RYC002N05 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 50 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 800 ma continuous i s 150 ma pulsed i sp 800 ma power dissipation p d 200 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 625 ? c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter *2 *1 *1 * abbreviated symbol : qj (1) source (2) gate (3) drain ? 1 body diode ? 2 esd protection diode sst3 ? 2 ? 1 (3) (1) (2) product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 50 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =50v, v gs =0v gate threshold voltage v gs (th) 0.3 - 0.8 v v ds =10v, i d =1ma - 1.6 2.2 i d =200ma, v gs =4.5v - 1.7 2.4 i d =200ma, v gs =2.5v - 2.0 2.8 i d =200ma, v gs =1.5v - 2.2 3.3 i d =100ma, v gs =1.2v - 3.0 9.0 i d =10ma, v gs =0.9v forward transfer admittance l y fs l 0.2 - - s i d =200ma, v ds =10v input capacitance c iss - 26 - pf v ds =10v output capacitance c oss -6-pfv gs =0v reverse transfer capacitance c rss - 3 - pf f=1mhz turn-on delay time t d(on) -5-nsi d =100ma, v dd 25v rise time t r -8-nsv gs =4.5v turn-off delay time t d(off) - 17 - ns r l =250 ? fall time t f - 43 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =200ma, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * RYC002N05 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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